Built to Fix the Power Efficiency Problem in RF Front-Ends
Falcomm was founded in 2023 in Baltimore, Maryland by RF engineers who spent years watching phased-array satellite and 5G designs get constrained by the same limitation: GaAs PA efficiency too low for the power budget, and no GaN alternative with the right frequency range and form factor.
Why Falcomm Exists
The problem was visible for years before Falcomm was formed. Ku and Ka-band satellite ground terminals were being designed with GaAs PAs at 32-38% drain efficiency because no commercially available GaN-on-SiC device covered 12-40 GHz in a single die format with the right output power and package footprint. The consequence was that aperture arrays had to either reduce element count (reducing EIRP) or accept a thermal and primary power design that made the terminal too large and expensive for mobile deployment.
The GaN-on-SiC process physics have been understood since the 1990s. What was missing was a device company focused exclusively on the satellite and mmWave front-end market window, optimizing the epi stack and package design for that specific constraint set rather than treating RF PA as a secondary product line. Falcomm was started to fill that gap.
Development of the FA-2401 began in 2023, with bench characterization of the GaN-on-SiC process stack validating the efficiency targets through 2024 and into 2025. The device architecture was designed specifically for the Ku and Ka satellite band market window rather than adapted from a broader-market product line. Engineering samples are available to qualified system integrators through the evaluation kit program.
Falcomm is angel-backed, with angel investment secured in April 2026 to accelerate product development. The engineering team works directly with system integrators during the evaluation phase, which means specification questions are answered by the engineers who designed the process stack and ran the load-pull measurements. We are not a production-volume supplier yet. We are a focused engineering team with a specific device architecture and the bench data to support it.
The Engineers Behind the FA-2400 Series
Former principal RF IC designer at a defense electronics company with 11 years GaN MMIC characterization and process development experience. Holds a Ph.D. in Electrical Engineering from the University of Maryland. Leads the FA-2400 epi stack and device architecture decisions at Falcomm.
MMIC layout and electromagnetic simulation specialist. Prior work focused on GaN HEMT process characterization for Ka-band radar apertures. Responsible for FA-2401 and FA-2402 matching network and package design, load-pull measurement methodology, and reliability characterization protocols.
Systems integration background in satellite ground terminal and 5G base station PA subsystems. Works with Falcomm customers through the board-level integration process, bias network design, and thermal management. Developed the FA-2401 evaluation kit board and test procedure documentation.
Baltimore, Maryland
Falcomm is located in the Port Covington development district of Baltimore, adjacent to the University of Maryland BioPark. The office is within commuting distance of Johns Hopkins University, the University of Maryland College Park, and the Naval Research Laboratory. The Mid-Atlantic semiconductor and defense corridor is the right context for a GaN RF company building for satellite and defense customers.
The Falcomm lab includes RF characterization equipment through 67 GHz, load-pull capability at 40 GHz, and thermal resistance measurement capability. Engineering engagements with customers can be conducted at the Baltimore facility or at the customer site for system-level integration support.
Baltimore, MD 21201